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Graphene oxide film reduction using atomic hydrogen annealing

Publication date: 1 March 2017
Source:Thin Solid Films, Volume 625
Author(s): Akira Heya, Naoto Matsuo
Atomic hydrogen annealing (AHA) was investigated as a novel method to reduce graphene oxide (GO). In this method, high-density atomic hydrogen is generated on a hot tungsten (W) surface through a catalytic cracking reaction. The X-ray photoelectron spectra show that the GO films were reduced by AHA at low temperature. The GO film resistance, measured using the four-point probe method, decreased by 6 orders of magnitude when treatment was carried out with a W mesh temperature of 1780°C, a sample temperature of 241°C, and for a treatment time of 3600s. A reduced graphene oxide (r-GO) film having a low resistance of 272Ω was obtained by AHA. AHA allows fine control over the obtained physical properties. We expect that these r-GO films obtained by using AHA at low temperature will be used for producing electrical devices.


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