Publication date: 1 March 2017
Source:Thin Solid Films, Volume 625
Author(s): G.R. Khan, K. Asokan, Bilal Ahmad
The phase transition temperature (T t ) across semiconductor-to-metal transition (SMT) of the vanadium dioxide (VO2 ) thin films can be tuned to room temperature either by reducing the grain size of crystallites to nanoscale or by doping them with molybdenum (Mo62 nanofilms across SMT. Room temperature value of T t 2 nanofilms as compared to 333.22 nanofilms and against 3402 thin films. A systematic analysis of charge carrier mobility (μ ), Seebeck coefficient (s ) and charge carrier concentration (n ) was performed for the first time to the best knowledge of the authors. Decrease in μ and increase in s were observed across SMT with increase in doping percentage of Mo6n increased by 1 to 4 orders of magnitude across SMT for the samples which contributed almost entirely for the resistance change. Resistance ratio (R s /R M ) and hysteresis width (ΔH ) diminished whereas hysteresis sharpness (ΔT ) escalated across SMT with the increase of Mo+
Source:Thin Solid Films, Volume 625
Author(s): G.R. Khan, K. Asokan, Bilal Ahmad
