The effects of tetramethylammonium hydroxide treatment on the performance of recessed-gate AlGaN/GaN high electron mobility transistors

Publication date: 30 April 2017
Source:Thin Solid Films, Volume 628
Author(s): Jae-Won Do, Hyun-Wook Jung, Min Jeong Shin, Ho-Kyun Ahn, Haecheon Kim, Ryun-Hwi Kim, Kyu Jun Cho, Sung-Jae Chang, Byoung-Gue Min, Hyung Sup Yoon, Ji-Heon Kim, Jin-Mo Yang, Jung-Hee Lee, Jong-Won Lim
AlGaN/GaN high electron mobility transistors (HEMTs) are fabricated using a gate recess process and a surface treatment with tetramethylammonium hydroxide (TMAH) prior to gate metal deposition. Electrical characterizations show improved extrinsic transconductance and saturation current, as well as more uniform off-state behavior with reduced off-current by a factor of 3.5 and gate leakage current by a factor of 4.2 in the devices with TMAH treatment. The analyses based on atomic force microscopy, transmission electron microscopy, and X-ray photoelectron spectroscopy show that the TMAH treatment effectively reduces the roughness of the recess-etched AlGaN surface and removes the native oxide layer on the AlGaN surface, suggesting a simple and viable route towards the fabrication of gate-recessed HEMTs based on AlGaN/GaN heterostructure with improved controllability and uniformity.