Publication date: 30 April 2017
Source:Thin Solid Films, Volume 628
Author(s): Po-Han Chen, Chih-Ting Lin
A solution-based ferroelectric relaxor poly(vinylidene fluoride-trifluoroethylene-chlorotrifluoroethylene) terpolymer, P(VDF–TrFE–CTFE), is employed in a metal-insulator-semiconductor (MIS) capacitor as a high-k dielectric material. Based on experimental characterizations, the capacitance of the MIS structure is decreased with P(VDF-TrFE-CTFE) thickness reduced. Examined by electrical characterizations, an equivalent interface layer at the P(VDF-TrFE-CTFE)/silicon interface is proposed in this work. This shows that the P(VDF–TrFE–CTFE) film thickness is an important factor while using it as a high-k dielectric material in devices. At the same time, experimental results also show a low remnant polarization and low coercive field of 1.23
Source:Thin Solid Films, Volume 628
Author(s): Po-Han Chen, Chih-Ting Lin