An intrinsic amorphous silicon oxide and amorphous silicon stack passivation layer for crystalline silicon heterojunction solar cells

Publication date: 30 April 2017
Source:Thin Solid Films, Volume 628
Author(s): Taweewat Krajangsang, Sorapong Inthisang, Jaran Sritharathikhun, Aswin Hongsingthong, Amornrat Limmanee, Songkiate Kittisontirak, Perawut Chinnavornrungsee, Rungrueang Phatthanakun, Kobsak Sriprapha
Intrinsic amorphous silicon oxide (i-a-SiO:H) films were used as passivation layers in crystalline silicon heterojunction (c-Si-HJ) solar cells. The effective lifetime (τ eff ) and photovoltaic (PV) parameters were improved by controlling the CO2/SiH4 ratio in the i-a-SiO:H rear passivation layer. The enhancement of the open circuit voltage (V oc ) and solar cell efficiency (η) caused by the i-a-SiO:H/i-a-Si:H stack passivation layer was investigated. The c-Si-HJ solar cells using an i-a-SiO:H/i-a-Si:H stack passivation layer showed a high V oc and η compared to using a conventional i-a-SiO:H passivation layer. The highest efficiency obtained for a c-Si-HJ solar cell using an i-a-SiO:H/i-a-Si:H stack passivation layer was 19.4% (V oc =715mV, J sc =34.9mA/cm², FF =0.78).