Regular distribution of (3×3) Bi-reconstructed stripes on Si(553) surface

Publication date: 1 June 2017
Source:Thin Solid Films, Volume 631
Author(s): M. Kopciuszyński, A. Mandziak, M. Dachniewicz, R. Zdyb
The crystallographic and electronic structures of $(\sqrt{3}\times \sqrt{3})$ Bi-induced reconstructions of Si(553) surface are investigated with reflection high energy electron diffraction (RHEED), scanning tunneling microscopy and angle resolved photoelectron spectroscopy. The α and β $(\sqrt{3}\times \sqrt{3})$ superstructures have been obtained at 1/3 and 1 monolayer of Bi, respectively. RHEED experiments indicate that $\alpha (\sqrt{3}\times \sqrt{3})$ is formed on wide (111) terraces separated by (331) facets while the $\beta (\sqrt{3}\times \sqrt{3})$ phase stabilizes regular distribution of steps over entire Si(553) surface. In the latter case the double atomic height steps separate Bi-reconstructed (111) terraces of about 3nm in width. Only one orientation of $(\sqrt{3}\times \sqrt{3})$ reconstruction is formed as a consequence of broken three-fold symmetry. The electronic structures of both Bi-induced superstructures are similar to the corresponding ones obtained for a flat Si(111) surface.