Publication date: 30 November 2015
Source:Thin Solid Films, Volume 595, Part A
Author(s): Ming-Kwei Lee, Chih-Feng Yen
The electrical characteristics of MOS capacitor with 5/2.92 /Al2 O3 prepared by atomic layer deposition on (NH4 )2 S treated InP were studied. The electrical characteristics were improved from the reduction of native oxides and sulfur passivation on InP by (NH4 )2 S treatment. The high dielectric constant TiO2 is used to lower the equivalent oxide thickness and the atomic force microscopy image reveals extremely flat and uniform surface. The root-mean-square roughness value of TiO2 /S-InP is 0.2262 O3 layer can reduce the thermionic emission of low bandgap TiO2 and its self-cleaning capability further improves the interface state density. For 5/2.92 /Al2 O3 /S-InP stacked MOS capacitor, the leakage currents can reach 6.4
Source:Thin Solid Films, Volume 595, Part A
Author(s): Ming-Kwei Lee, Chih-Feng Yen
