Sol–gel deposition of Pb(Zr,Ti)O3 on GaAs/InGaAs Quantum wells heterostructure via SrTiO3 templates: Stability of the semiconductor during oxide growth

Publication date: Available online 21 January 2016
Source:Thin Solid Films
Author(s): B. Meunier, L. Largeau, P. Regreny, R. Bachelet, B. Vilquin, J. Penuelas, G. Saint-Girons
Pb(Zr,Ti)O3 (PZT) layers were grown by sol–gel deposition on a InGaAs/GaAs quantum well heterostructure. Prior to PZT deposition, a thin SrTiO3 template is fabricated by molecular beam epitaxy. X-ray diffraction and transmission electron microscopy are used to analyse the structural quality of the epitaxial stack. Photoluminescence experiments allow for assessing the effect of PZT growth on the quantum well emission. Despite significant oxygen diffusion through the III-V heterostructure, conditions are found to maintain room temperature photoluminescence of the quantum wells.