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P-type CuO and Cu2O transistors derived from a Sol–Gel Copper (II) acetate monohydrate precursor

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Publication date: Available online 22 January 2016
Source:Thin Solid Films
Author(s): Jaewon Jang, Seungjun Chung, Hongki Kang, Vivek Subramanian
We realize p-type thin film transistors (TFT) with solution-processed channels using a sol–gel route, based on a Copper (II) Acetate precursor. The sol–gel process initially produces Cu, which is then oxidized depending on sintering conditions to produce Cu2O and ultimately CuO. These processes are performed at temperatures no higher than 500°C, and are therefore compatible with standard display glass substrates for use in transparent display applications. To control the film morphology of the sol–gel processed copper oxide layer, additional water was added to the precursor solution. As the water to alkoxide ratio is increased, the degree of hydrolysis increased, thus increasing the grain size of CuO and Cu2O. The resulting p-type CuO and Cu2O TFTs exhibited improved thin film transistor performance, including field effect mobilities of 1.0×102 cm2/Vs and 2.0×103 cm2/Vs, respectively, and an on/off ratio of approximately 103.


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