Ytterbium β-diketonate complexes for near infra-red organic light-emitting devices

Publication date: 1 December 2016
Source:Thin Solid Films, Volume 620
Author(s): Zubair Ahmed, Rian E. Aderne, Jiang Kai, Helmut I.P. Chavarria, Marco Cremona
A series of NIR emitting novel ytterbium tris β-diketonate ternary complexes, [Yb(tta)3(L)]·H2O {tta=thenoyltrifluoroacetylacetone and L=dibenzyl sulphoxide (dbso), diphenyl sulphoxide (dpso) and benzoguinamine (bga)} was synthesised, and the photophysical and optoelectronic properties of their films were studied. Nuclear Magnetic Resonance (NMR) analysis indicates that the complexes are seven-coordinate which is a highly asymmetric structure enhancing the radiative transitions. It is an indicative of efficient energy transfer from coordinated ligands to Yb ion. The complexes were doped in Tris(4-carbazoyl-9-ylphenyl)amine (TcTa) organic matrix and the doped samples were used as the emitting layers to fabricate near-infrared organic light emitting diodes (NIR-OLEDs) with the structure: Indium tin oxide/{N,N′-bis(naphtalen-2-yl)-N,N′-bis(phenyl) benzidine} (25nm)/[Yb-complexes] (10%): TcTa (40nm)/(2,9-Dimethyl-4,7-diphenyl-1,10-phenanthroline) (15nm)/tris(8-hydroxy-quinolinato) aluminium (10nm)/LiF (0.5nm)/Al (120nm). The complex, [Yb(tta)3(dpso)]·H2O shows the highest electroluminescence (EL) efficiency with maximum irradiance of 22.48μW/cm² and current density of 29.5mA/cm² at 15V. It indicates an improved EL performance over the reported devices based on the Yb (III) complexes. In view of electrical characteristics, the current-voltage responses were interpreted by using Mott–Gurney model which allows us to determine the carrier mobility of the complexes.